Ferrocene Doping in Horizontal Hydride Vapor Phase Epitaxy
نویسنده
چکیده
In order to produce semi-insulating, thick layers of gallium nitride we try to incorporate iron into our hydride vapor phase grown material. As past experiments have shown, a solid iron source inside the reactor is not adequate in terms of controllability and purity. Therefore our reactor has been upgraded with a gasoues ferrocene source. This article demonstrates first promising results and shows the current problems together with some possibilities to solve them.
منابع مشابه
Iron Doping in Hydride Vapor Phase Epitaxy of GaN
In order to overcome problems with non-uniform iron (Fe) doping in our GaN layers grown by hydride vapor phase epitaxy, we have optimized the construction of our ferrocene doping channel. By pre-heating the hydrogen carrier gas before entering the hot bubbler, a constant Fe supply could be established. Moreover, losses of the precursor gas in the reactor could be minimized by a re-design of the...
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